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. 2014 Mar 11;7(3):2044–2061. doi: 10.3390/ma7032044

Figure 2.

Figure 2.

(a) Output characteristics (IDS-VDS) and (b) transfer characteristics (IDS-VG) of a back-gate ZnO nanowire FET without a ferroelectric LC layer. The inset shows a schematic view of a ZnO nanowire FET with a back-gate configuration; (c) output characteristics and (d) hysteretic behaviours of the ferroelectric LC-coated ZnO nanowire FET. Reprinted with permission from [7]. Copyright 2013, American Institute Physics.