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. 2014 Mar 13;7(3):2155–2182. doi: 10.3390/ma7032155

Figure 8.

Figure 8.

Simultaneously collected topography-current (left) and topography-CPD images (right) on the surface of (a) non-annealed and (b) annealed at 1000 °C 2.5 nm-HfO2/1 nm-SiO2/Si stack. The images clearly show structural and electrical properties modification.