Figure 3. The effects of bias on hybridization and melting kinetics.

(a) Comparison of temperature and bias-dependent melting. With increasing temperature, the melting rate increases and hybridization rate decreases. Equivalently, when the gate bias increases, the equilibrium favours the melted state. (b–d) Arrhenius plots showing how application of gate bias affects the kinetics of melting and hybridization for 100, 10 and 1 nM complementary target. Upon the application of 300 mV of gate bias, the entropy of activation for the melting reactions increases, while the enthalpy of activation for the hybridization reaction decreases. Error bars are calculated from five different 60-s intervals at each temperature.