Table 1.
Heating power, resulting substrate temperature, nitrogen-to-argon flow ratio (ƒN2/Ar), growth rate and thickness as well as resulting composition (as determined by XPS) for the different processes.
| Process No. | Heating (kW) | T (°C) | ƒN2/Ar | Growth Rate (nm/s) | Coating Thickness (µm) | Si (at.%) | N (at.%) | O (at.%) |
|---|---|---|---|---|---|---|---|---|
| 1 | 1 | 200 | 0.06 | 0.50 | 7.5 | 71.7 | 22.8 | 1.8 |
| 2 | 1 | 200 | 0.17 | 0.40 | 7.3 | 54.6 | 39.2 | 3.6 |
| 3 | 1 | 200 | 0.30 | 0.34 | 7.1 | 45.6 | 48.0 | 5.0 |
| 4 | 3 | 350 | 0.17 | 0.42 | 7.6 | 54.4 | 40.9 | 2.0 |
| 5 | 3 | 350 | 0.30 | 0.35 | 7.4 | 45.2 | 47.5 | 5.8 |
| 6 | 5 | 430 | 0.30 | 0.40 | 7.3 | 53.9 | 41.3 | 2.1 |