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. 2017 May 31;8:15566. doi: 10.1038/ncomms15566

Table 1. Electroluminescent and lifetime characteristics for CONV, GRAD and managed PHOLEDs (M0–M5) at L 0=1,000 cd m−2.

Device J0 (mA cm−2) EQE (%) V0 (V) CIE* T90 (h) T80 (h) ΔV(T90) (V) ΔV(T80) (V)
CONV 6.7±0.1 8.0±0.1 6.6±0.0 [0.15, 0.28] 27±4 93±9 0.3±0.1 0.4±0.1
GRAD 5.7±0.1 8.9±0.1 8.0±0.0 [0.16, 0.30] 47±1 173±3 0.6±0.1 0.9±0.1
M0 5.5±0.1 9.4±0.1 9.2±0.0 [0.16, 0.30] 71±1 226±9 0.9±0.1 1.2±0.1
M1 5.4±0.1 9.5±0.1 8.8±0.1 [0.16, 0.29] 99±3 260±15 1.2±0.1 1.6±0.1
M2 5.4±0.1 9.3±0.0 8.9±0.1 [0.16, 0.31] 103±0 285±8 0.7±0.1 1.0±0.1
M3 5.3±0.1 9.6±0.0 9.0±0.1 [0.16, 0.30] 141±11 334±5 1.1±0.1 1.5±0.2
M4 5.2±0.1 9.6±0.2 8.6±0.0 [0.16, 0.31] 126±7 294±16 1.0±0.1 1.3±0.1
M5 5.1±0.1 9.9±0.1 8.6±0.0 [0.16, 0.31] 119±6 306±3 0.9±0.1 1.2±0.1

EQE, external quantum efficiency.

*Measured at current density of J=5 mA cm−2.

Errors for the measured values are s.d. from at least three devices.