Table 1.

Characteristic geometric parameters for the four samples together with their standard deviations.

Sample	L [nm]	D [nm]	tAlGaAs [nm]	tGaAs [nm]
A	4750 ± 34	138 ± 5	3.5	0.7
B	5190 ± 64	151 ± 5	8.6	1.7
C	4600 ± 52	165 ± 6	11.7	5.8
D	4690 ± 47	197 ± 9	27.7	5.5

The four samples exhibit low fabrication error margins.