Figure 3.

(a) I(V) curves recorded with a doped diamond tip on the pristine MoS₂ surface (red) and on a defect (black). The different symbols represent different measurements. Inset: The corresponding semi logarithmic I(V) curves. (b) A spatially resolved current map (200 × 200 nm²) obtained via 128 × 128 grid I(V) curves, recorded from −1.2 to 1.2 V. The map corresponds to a voltage of 0.6 V. The white arrow indicates a metal-like defect located at the first trilayer, whereas the black arrow a metal-like defect located at the second trilayer. (c) The extracted Schottky barrier height (ϕ_B) map of the surface obtained by the I(V) curves in (a). Significant variations are observed that are induced by subsurface defects. (d) Cross sections of the ϕ_B taken above subsurface defects of the first (red) and second (black) MoS₂ trilayers indicated with dashed white and black circles in the inset. Inset: the corresponding ϕ_B map.