Figure 4.

(a) Schematic of a metal–semiconductor junction with a Schottky barrier including Fermi level pinning. (b) Cross section of the spatially resolved ϕ_B map above a first trilayer subsurface defect, recorded with a PtSi tip. Inset: the corresponding ϕ_B map. (c) Cross section of the ϕ_B map for a subsurface defect recorded with a n-doped Si tip. Inset: the corresponding ϕ_B map. (d) Schottky barrier height for the pristine MoS₂ (blue) and the defects (red) for various work functions of the tip (ϕ_M). The pinning factor S and the charge neutrality level (ϕ_CNL) are extracted using eq 6. The dotted line is the standard Schottky–Mott rule (see eq 1).