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. 2017 Jun 13;7:3353. doi: 10.1038/s41598-017-03507-0

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Magnetism and electronic structure of V-doped BiTeI at high and low temperature: schematics and measurements. (a) Sketch of the BiTeI TL structure with built-in V atoms and their magnetic moments disordered at high temperature. (b) Model dispersion relations of the spin-orbit split 2DEG state in a high temperature paramagnetic state, with α _R being the Bychkov–Rashba coefficient. (c) Measured dispersion of the Rashba-split Te-terminated surface state of Bi_0.985V_0.015TeI at room temperature. (d–f) The same set as in (a–c), but for the ordered magnetic moments and a magnetic gap of 2Δ.