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Other Methods
| Method | Parameters | Substrate | Substrate thickness (nm) | BP Thickness (nm) | Device structure | Reference |
|---|---|---|---|---|---|---|
| Plasma Thinning | Ar+ plasma source (30 W power), pressure (30 Pa), 20 s at RT | SiO2/Si | 300 (SiO2) | up to 5L | – | 211 |
| Plasma Etching | 30 mTorr for 5 min, 350 W | SiO2/Si | 285 (SiO2) | 4 to 50 (as‐exfoliated), 2 to 10 (after plasma etching) | FET | 212 |
| PLD | KrF pulsed laser (λ = 248 nm), 5 Hz repetition rate, 150 °C 1.5 × 10−7 Torr | SiO2/Si | – | 2 to 10 nm (a‐BP) | FET | 213 |
