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. 2017 Jun 20;8:1082. doi: 10.3389/fpls.2017.01082

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Copyright © 2017 Gu, Zhou, Li, Chen, Wang, Zhang and Yang.

This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

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(A) Rapid light curves (RLC) of Z802 and pgl under high (HL) and low light treatment (LL). The relative electron transport rate (rETR) is plotted against PAR irradiance (μmol photons m⁻² s⁻¹). Fitted curves are plotted with a dotted line, and the rETR_max, E_k, and α are displayed in the RLCs of Z802 under LL. (B) PSII efficiency (Φ_PSII), (C) photochemical quenching (qP), and (D) non-photochemical quenching (NPQ) derived from the RLCs under high (HL) and low light (LL) in Z802 and pgl as a function of PAR.