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. 2017 Jun 12;8:15741. doi: 10.1038/ncomms15841

Figure 1. Structure and characteristics of organic ferroelectric memory diodes.

Figure 1

(a) AFM micrograph of a phase-separated blend film of PFO and P(VDF-TrFE). The film thickness amounted to 265±10 nm. (b) Schematic cross-section of a ferroelectric memory diode. For the sake of clarity, here only one pillar of PFO surrounded by P(VDF-TrFE) is shown. The black arrows indicate the 2D polarization of the ferroelectric polymer. Holes are efficiently transported at the PFO/P(VDF-TRFE) interface (red arrows). (c) Measured (symbols) and simulated (line) I–V characteristics at ambient temperature (290 K). (d) Measured (symbols) and simulated (lines) I–V characteristics as a function of temperature.