Skip to main content
. 2017 Jun 12;8:15741. doi: 10.1038/ncomms15841

Figure 4. Scaling of organic ferroelectric memory diodes.

Figure 4

(a) Hole concentration in the PFO pillar with lateral dimension W=WPFO+WP(VDF-TrFE) , where WPFO=5 nm and WP(VDF-TrFE)=200 nm, biased at 5 V. (b) Comparison between the calculated I–V characteristics as a function of the P(VDF-TrFE) lateral dimension (WP(VDF-TrFE)) with WPFO=5 nm.