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. 2017 Jun 15;8:15763. doi: 10.1038/ncomms15763

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Copyright © 2017, The Author(s)

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Optical microscope image of a top gate FET with a channel made by printing the water-based ink (W-GSA sample). (b) Dependence of the source-drain FET current (I_DS) from the gate bias V_G in the range from −2.2 V to +2.2 V, measured while a source-drain voltage V_SD=1 mV is applied. The dashed line represents the fit to the data in the linear region and gives a transconductance∼4.4 nA V⁻¹.