Figure 2.

X‐ray diffraction patterns of the materials grown at 1100 °C. a) Si–SiO₂ composites with and without dopant, b) Mn‐doped Si–SiO₂ composites obtained with different starting concentrations of MnCl₂ and c) free‐standing doped and undoped SiNCs. d) Raman spectra of the free‐standing SiNCs grown from Si–SiO₂ composites at 1100 °C (inset: full Raman spectra).