TOF-SIMS measurements of Cu-Ni samples (a) as-deposited Cu-Ni film of copper thickness of 500 nm. (b)-(h) as-grown samples with Cu-Ni alloy of copper thicknesses of 100 nm, 150 nm, 200 nm, 250 nm, 500 nm, 750 nm, and 1000 nm respectively each with 50 nm Ni, representing Cu-, Ni-, and C- counts with respect to sputtering depth. Abundant Cu- concentration remains the same with changing Cu thicknesses but Ni- concentration decreases as Cu thickness increases.