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. 2017 Jun 26;8:15909. doi: 10.1038/ncomms15909

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Copyright © 2017, The Author(s)

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Schematic illustration of the bottom-gate, bottom-contact OFET device (structures not drawn to scale; purple: semiconducting film; yellow: gold source/drain electrodes; light grey: dielectric SiO₂ layer; dark grey: gate Si electrode). (b) AFM image of rrP3HT₁₀₆-b-rsP3HT₄₇ fibres (cast from 0.1 mg ml⁻¹ anisole solution). Scale bar, 1 μm. The representative (c) output and (d) transfer characteristics of the OFET device of the unfragmented rP3HT₁₀₆-b-rsP3HT₄₇ fibres (L_n>10 μm) (I_DS=drain-to-source current; V_DS=drain-to-source bias; V_GS=gate-to-source bias).