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. 2017 Jul 7;3(7):e1602783. doi: 10.1126/sciadv.1602783

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Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

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Fig. 4 — (A) Transfer curves (V_GS-I_DS) of the ultrathin Ge transistor. (B) Photoresponsivity and V_DS-I_DS curves of the ultrathin Ge phototransistor under the illumination power density of 140.8 mW/cm². The peak photoresponsivity is 4.7 A/W. (C) Top: Ultrathin Ge transistor photocurrent (|ΔI_DS|) as a function of V_GS under various power conditions: 3.36 (purple), 20.8 (green), 140.8 (orange), and 343.2 mW/cm² (red), respectively. Bottom: Transconductance (|G_m|) of ultrathin Ge transistors. (D) Comparison of threshold voltage change (ΔV_TH) of the ultrathin Ge phototransistor with that of the epitaxial-based III-V phototransistor. The measured ΔV_TH values are obtained by subtracting the threshold voltages extracted from the V_GS-I_DS curves under the illuminated and dark conditions (fig. S9). The solid curve is plotted using the empirical equation for ΔV_TH.