Figure 1. Thermoelectric properties of the p-type CuI thin films.

(a) Seebeck coefficients S, (b) hole mobility μ, (c) power factor PF, (d) thermal conductivity κ and (e) figure-of-merit ZT of γ-CuI thin films (thickness of 300 nm) deposited on glass as a function of hole concentration p at 300 K. (f) Figure-of-merit ZT of γ-CuI thin films deposited on glass near room temperature. In a the solid line is a fit with equation (4). In b and e the dashed line is a guide to eye indicating the averaged hole mobility μ_ave or the saturation of ZT. In (c) the solid line is derived from the calculation using equation (6) with a single-band model, and the dashed line presents the theoretical data taking into account the non-parabolicity of the bands.