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. 2017 Jun 23;13(6):e1005545. doi: 10.1371/journal.pcbi.1005545

Table 1. Parameter values used throughout the study.

Name Symbol Value
Network model
Number of neurons N 50,000
Membrane capacitance C 200 pF
Leak conductance gL 10 nS
Leak reversal potential EL −65 mV
Threshold slope factor ΔT 1.5 mV
Threshold voltage VT −50 mV
Spike voltage Vs −40 mV
Reset voltage Vr −70 mV
Subthreshold adaptation conductance1 a 4 nS
Spike-triggered adaptation increment1 b 40 pA
Adaptation reversal potential Ew −80 mV
Adaptation time constant τw 200 ms
Refractory period2 Tref 0 ms
Gaussian filter width for external input σt 1 ms
Discretization time step Δt 0.05 ms
Spike rate estimation bin width ΔT 1 ms
Fokker-Planck model
Membrane voltage lower bound Vlb −200 mV
Finite-volume membrane voltage spacing ΔV 0.028 mV
Discretization time step Δt 0.05 ms
Low-dimensional models
Discretization time step Δt 0.01 ms
Membrane voltage spacing3 ΔV 0.01 mV
Spacing of mean input3 Δμ 0.025 mV/ms
Spacing of input standard deviation3 Δσ 0.1mV/ms

1If not specified otherwise.

2A nonzero refractory period is not supported by the spec2 model.

3Parameters for precalculation of model quantities (before simulation).

The values of coupling parameters (K, J, τd) are specified in the captions of Figs 1 and 5, the values of parameters for the external input, μext or (μ¯, τouμ, ϑμ), and σext or (σ2¯, τouσ2, ϑσ2), are provided in each figure (caption).