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. 2017 Jun 8;9(1):162–176. doi: 10.1016/j.stemcr.2017.05.009

Figure 2.

Figure 2

Electrical and Synaptic Development of CerebAstro-Derived iNs

(A–H) Lineage-reprogrammed CerebAstro iNs express SYNAPSIN 1 (green) 30 dpn with Ascl-DsRed or Neurog2-DsRed plasmids. Example of RFP+/SYNAPSIN+ iNs 30 dpn with ASCL1 (A–D) or NEUROG2 (E–H). (D–H) Magnifications of dashed boxes in (C) and (G), respectively.

(I–L) Electrophysiological properties of ASCL1- and NEUROG2-iNs. Current clamp traces from ASCL1-iNs showing spikelet (left), few spikes (middle), and regular spiking (right) in response to depolarizing current injections (50 pA, 500 ms) (I, top). Arrows highlight spontaneous excitatory postsynaptic potentials in recorded cells (I). Fluorescence images of the recorded ASCL1-iNs (I, bottom).

(J) Example of current clamp traces from a NEUROG2-iNs responding with a few spikes to depolarizing current injections (50 pA, 500 ms) (J, top). Note the deeper sag due to hyperpolarizing current injections (−100 pA, 500 ms) compared with ASCL1-iNs. Fluorescence image of the recorded NEUROG2-iN (J, bottom).

(K) Current-voltage relationships for ASCL1-iNs (circles) and NEUROG2-iNs (triangles) measured at the beginning of the onset of the current steps.

(L) Plot of mean input resistance, resting membrane voltage, and mean action potential amplitude following the current injection (50 pA, 500 ms) of ASCL1-iNs (black plot) and NEUROG2-iNs (white plot).

Data are derived from three independent experiments (mean ± SEM). Scale bars, 50 μm.