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. 2017 Mar 27;4(7):1700029. doi: 10.1002/advs.201700029

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© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

PMC Copyright notice

Active pressure/strain sensor based on PENG and TENG. A) Conformal modulus sensor based on PZT. Reproduced with permission.90 Copyright 2015, Nature Publishing Group. B) Active‐matrix strain sensor based on a PENG‐powered graphene transistor. Reproduced with permission.96 C) Structure of an OFET composed of microstructured P(VDF‐TrFE). Reproduced with permission.[[qv: 83a]] D) Implantable active sensor based on TENG. Reproduced with permission.92 Copyright 2016, American Chemistry Society.