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. 2017 Jun 27;7(7):158. doi: 10.3390/nano7070158

Figure 3.

Figure 3

(a) Band diagram of the n-type Si substrate along the surface below the Gr/SiO2/Si MOS capacitor and the Gr/Si diode, showing that diffusion of photogenerated holes towards the diode area is energetically favored. Band diagram of the Gr/Si junction in (b) forward and (c) reverse bias (the thin tunneling SiO2 interfacial layer is omitted).