Table 1. Solar Cell Performance Parameters for Planar-Heterojunction Devices with Different Electron and Hole Transport Layersa.
| device structure | VOC (V) | JSC (mA/cm2) | FF (%) | PCE (%) |
|---|---|---|---|---|
| A: MoO3/SubNc/F12-SubPc-Cl/BCP:C60 | 0.75 | 2.64 | 17.4 | 0.34 |
| B: MoO3/SubNc/F12-SubPc-Cl/BCP:Yb | 0.73 | 5.57 | 57.6 | 2.25 |
| C: PEDOT:PSS/DIP/SubNc/F12-SubPc-Cl/BCP:Yb | 0.75 | 8.55 | 53.4 | 3.31 |
| D: MoO3/SubNc/Cl6-SubPc-Cl/BCP:C60 | 1.00 | 6.17 | 65.9 | 3.96 |
| E: PEDOT:PSS/DIP/SubNc/Cl6-SubPc-Cl/BCP:C60 | 1.04 | 10.1 | 66.6 | 6.86 |
a
For each device structure, the open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE) of the best-performing cell are given.