Subject area |
Physics, Electrical Engineering |
More specific subject area |
Materials Science, Photodetector |
Type of data |
Figures, Images |
How data was acquired |
Field emission scanning electron microscope (FESEM, JOEL, JSM_7800 F) |
X-ray photoelectron spectroscopy (XPS, PHI 5000 VersaProbe ll) |
UV-visible diffused reflectance photo spectrometer (Simadzu, UV-2600) |
Potentiostat/Galvanostat (ZIVE SP1, WonA Tech, Korea) |
Data format |
Analyzed |
Experimental factors |
FESEM (Working distance 10 mm, 15 kV, specimen without conducting coating) |
XPS (samples prepared on the Si wafer, scan time 30 min, full scan) |
Light source (wavelength 850 nm, various frequency, square wave) |
Current-time (Chronoamperometry, Bias 0 V to -1.5 V, data interval 40 μs) |
Experimental features |
Vertically grown SnS layers |
Data source location |
Incheon National University, Incheon 22012, Korea |
Data accessibility |
The data are with this article |