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. 2017 Jul 26;14:206–212. doi: 10.1016/j.dib.2017.07.056
Subject area Physics, Electrical Engineering
More specific subject area Materials Science, Photodetector
Type of data Figures, Images
How data was acquired Field emission scanning electron microscope (FESEM, JOEL, JSM_7800 F)
X-ray photoelectron spectroscopy (XPS, PHI 5000 VersaProbe ll)
UV-visible diffused reflectance photo spectrometer (Simadzu, UV-2600)
Potentiostat/Galvanostat (ZIVE SP1, WonA Tech, Korea)
Data format Analyzed
Experimental factors FESEM (Working distance 10 mm, 15 kV, specimen without conducting coating)
XPS (samples prepared on the Si wafer, scan time 30 min, full scan)
Light source (wavelength 850 nm, various frequency, square wave)
Current-time (Chronoamperometry, Bias 0 V to -1.5 V, data interval 40 μs)
Experimental features Vertically grown SnS layers
Data source location Incheon National University, Incheon 22012, Korea
Data accessibility The data are with this article