a-IGZO | amorphous Indium Gallium Zinc Oxide |
TFT | Thin-film Transistor |
NFC | Near-field communication |
a-Si:H | Hydrogenated amorphous silicon |
RF | Radio Frequency |
RT | Room Temperature |
LAE | Large area electronics |
a-IGZO | amorphous Indium Gallium Zinc Oxide |
TFT | Thin-film Transistor |
NFC | Near-field communication |
a-Si:H | Hydrogenated amorphous silicon |
RF | Radio Frequency |
RT | Room Temperature |
LAE | Large area electronics |