Table 1. Field effect transistor data for organic semiconductors 1-5 using the nanodielectric III on n⁺-Si substrates.

Semiconductor	μ, cm2·V-1·S-1	Ion:Ioff*	VT, V
1	0.06 (0.04)	7 × 102 (104)	0.08(−4)
III†	0.03	6 × 102	0.05
II	0.02	1 × 103	0.06
I	0.04	8 × 102	0.03
2	0.002 (0.02)	5 × 102 (104)	−0.17 (2)
3	0.02 (0.2)	6 × 102 (105)	0.21 (14)
4	0.003 (0.001)	3 × 102 (104)	−0.22 (20)
5	0.01 (0.02)	2 × 102 (104)	−0.20 (−40)

Operating biases were 0.0 to ±1.0 V. Data in parentheses are for 300-nm-thick SiO₂ dielectric devices. All TFT mobilities (μ) and threshold voltages (V_T) are calculated in the saturation regime (11).

^*Calculated at V_G = 0.0 to ±1.0 V (0 to ± 100 V) and V_DS = ±1.0 V (± 100 V).

^†Data for nanodielectric III on glass-ITO substrates.