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. 2017 Aug 15;8:259. doi: 10.1038/s41467-017-00155-w

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Tamm—quantum well (QW)—monolayer hybrid device. a Schematic illustration of the Tamm-plasmon device with the embedded GaAs QWs and the MoSe₂ monolayer. b Reflectivity spectrum calculated by the transfer matrix method, which yields the theoretical Q-factor of 1095. c Layer sequence of the top part of the Tamm structure represented by the corresponding refractive indices (blue profile) and the simulated field distribution of the resonant mode (red) within the Tamm structure showing maxima at the QW and monolayer positions