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. 2017 Aug 15;8:248. doi: 10.1038/s41467-017-00317-w

Fig. 4.

Fig. 4

Differential spin-injection (p in) and detection (p d) polarizations of the cobalt/bilayer-hBN/graphene contacts. a Differential spin-injection polarization p in of four contacts with 2L-hBN tunnel barrier, as a function of the DC voltage bias V. Top axis represents the corresponding electric-field (=V/t hBN, t hBN ≈7 Å, the thickness of 2L-hBN barrier) induced across the Co/2L-hBN/graphene contacts. Note that the ΔR nl used to calculate pin8 in Fig. 3b is obtained from a different data set. b Differential spin-detection polarization p d of contacts 8 and 9 as a function of DC voltage bias V applied across the detector, while the injector bias is fixed at I in = + 20 μA. The insets in a and b show p in and p d of contacts at zero bias, respectively. The top x axis in a and b indicates the electric field corresponding to the applied bias across the contacts