Table 1.

Large spin accumulation underneath the contacts

	μ s underneath 8 (meV)		μ s underneath 9 (meV)
	↑↑	↓↑	↑↑	↓↑
Injected by 8	1.8	−1.8	1.6	−1.6
Injected by 9	2.1	2.1	2.5	2.5
Total μ s	3.9	0.3	4.1	0.9

Spin accumulation μ _s in graphene, beneath the contacts, in the two-terminal spin-valve geometry at bias I = +20 μA. The arrows ↑↑ (↓↑) represent the parallel (anti-parallel) orientation of the magnetization of contacts 8 and 9, respectively, from left to right. Bold values represent the total spin accumulation in different magnetization orientation of contacts