Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2017 Aug 18;7:8811. doi: 10.1038/s41598-017-08967-y

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

PMC Copyright notice

Micro-fabricated SLG temperature sensor devices on three different substrates. (a) SiO₂/Si substrate. Cross-sectional view of the fabrication process flow including: thermal growth of SiO₂ (1), SLG transferring (2), device patterning (3), plasma etching of graphene (4), and (5) PDMS gasket protection of the sensor during PR removal at electrical contacts area. (6) Close-up picture of the completed device with 4-wire electrodes configuration. (b) SiN substrate. Cross-sectional view of the fabrication process including: (1) LPCVD SiN deposition, (2) defining membrane using the KOH etching from the backside, (3) SLG transferring, (4) device patterning using O₂ plasma and (5) PDMS gasket protection of the sensor during PR removal at electrical contacts area. (6) Close-up picture of the completed device with the 4-wire electrodes configuration. (c) Suspended graphene. Cross-sectional view of the fabrication process flow including (1) thermal growth of the SiO₂, (2) patterning the suspension pits using BOE etching of SiO₂ followed by KOH etching of Silicon, (3) SLG transferring, (4) spin coating of PR and (5) device patterning using O₂ plasma. (6) Close-up picture of the completed device with the 4-wire electrodes configuration.