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. 2017 Mar 16;4(8):1600435. doi: 10.1002/advs.201600435

Figure 5.

Figure 5

Multilevel data storage of flexible BPQD‐based memory device. Tapping mode AFM images of a) 3–4 nm BPQD layer, b) 12 nm BPQD layer, and c) 20 nm BPQD layer with height profile. d) Current response of BPQD‐based RRAMs to various thicknesses of the BPQD layer. e) I–V characteristics of PET/Al/35 nm PMMA/BPQDs/35 nm PMMA/Al cells under four different compliance currents. f) Reversible resistive switching over 40 cycles with different compliance current. The switching pulse duration is fixed to 0.1 s and the reading voltage is 0.5 V.