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. 2017 Aug 22;8:296. doi: 10.1038/s41467-017-00343-8

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — ME NPR device with gigantic ME coupling. a Schematic representation of the magnetoelectric (ME) nanoplate resonator (NPR) and the induced ME voltage measurement setup by using a high-frequency lock-in amplifier (HFLIA). The RF magnetic field (H _RF) is generated by a RF coil. b Scanning electron microscopy (SEM) images of the fabricated the ME NPR. The red and blue areas show the suspended single nanoplate with FeGaB/AlN ME heterostructure and AlN anchors. The yellow area presents the RF ground-signal-ground electrode. c Admittance curve and Butterworth–van Dyke model fitting of the ME NPR with a resonance frequency (f _r) of 60.68 MHz, quality factor (Q) of 930 and electromenchanical coupling coefficient (k _t ²) of 1.35%. The inset shows the schematic of the cross-section of the ME heterostructure. d Finite element analysis (FEA) of ME NPR for the admittance amplitude. The inset shows the in-plane displacement of the nanoplate at resonance peak position and its coordinate system. e Admittance curve of a non-magnetic control sample which has a same device design as ME NPR. The inset shows the schematic of the device cross-section. f, ME coupling coefficient (left axis) and the induced ME voltage (right axis) versus the frequency of H _RF excitation. g FEA of ME NPR for the induced ME voltage. The inset shows the in-plane displacement excited by H _RF. h Induced voltage versus the frequency of H _RF excitation for the non-magnetic device. The inset illustrates the zoomed-in view of the resonance peak area (red circle)