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. 2017 Aug 24;7:9297. doi: 10.1038/s41598-017-08570-1

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Dependence of PL quantum efficiency for defect-related PL bands in GaN on the concentration of related defects. The data are from ten undoped GaN samples, six Zn-doped GaN and three Mg-doped GaN samples, all grown by HVPE. The solid lines, which are guides for eye, show a linear dependence and a saturation at the value of ~0.5. The dashed vertical line indicates the concentration of defects above which the PL intensity from dominant defects has no linear relationship with the defect concentration. The data for the GL1 band (empty circles) follow linear dependence (dash-dotted line) but lie well below the data for the dominant PL bands (RL1, YL1, BL1, and UVL), because the related defect has much lower hole-capture cross-section.