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. 2017 Aug 30;7:10055. doi: 10.1038/s41598-017-09523-4

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) The schematic and geometrical parameters of the tunable metasurface operating in the transmission mode. (b) The multiscale FEM mesh used for solving drift-diffusion equations. (c) Electron concentration distribution in the radial direction for the applied bias of 2 volts. (d) Electron concentration and permittivity of ITO corresponding to the operating wavelength of 1550 nm at the interface with the insulator for different applied voltages. (e) Redistribution of electron concentration in the silicon layer and its impact on the permittivity of silicon at the operating wavelength of 1550 nm for different applied voltages.