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. 2017 Jul 31;10(8):880. doi: 10.3390/ma10080880

Figure 1.

Figure 1

(a) Schematic representation of the fabricated In-doped ZnO TFT having the channel length (L) and width (W) of 50 μm and 800 μm, respectively. Atomic force microscope images (10 × 10 μm) of the (b) pristine and (c) O2 plasma-treated SiO2 dielectric layers. The insets show the contact angles of both layers.