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. 2017 Sep 6;7:10625. doi: 10.1038/s41598-017-09809-7

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Schematic of THz-TDS setup where pulsed terahertz radiation is directed at graphene on a range of substrates: (a) sapphire support to allow terahertz reflection and transmission measurements used for the initial validation of our method, (b) boron-doped Si/SiO₂ device substrate with simultaneous back-gating, (c) intrinsic Ge support and (d) Ge(110) growth substrate to demonstrate in-line characterisation without graphene transfer.