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. 2017 Sep 7;7:10885. doi: 10.1038/s41598-017-11461-0

Table 1.

Summary of the TFT device parameters with the reference IGZO and Ta/IGZO annealed at various temperatures.

Samples μFE (cm2/Vs) SS (V/decade) VTH (V) ION/OFF
(a) Control Device 18.1 ± 0.6 0.8 ± 0.1 0.9 ± 0.2 1.2 × 107
(b) Ta/ IGZO 200 °C 42.7 ± 2.7 0.4 ± 0.1 0.5 ± 0.2 3.4 × 107
(c) Ta/ IGZO 300 °C 54.0 ± 4.7 0.3 ± 0.1 0.2 ± 0.2 4.4 × 107
(d) Ta/ IGZO 400 °C 27.3 ± 1.1 0.5 ± 0.1 0.7 ± 0.3 2.2 × 107

Average and standard deviation values are included.