Table 2.
Device performance of various CNTs and graphene FETs
| Channel | Preparation method | Transistor structure | Gate dielectric | Gate length (μm) | Carrier type | On/Off ratio | Mobility (cm 2 /Vs) |
|---|---|---|---|---|---|---|---|
| Single CNT [32] | CVD on quartz | Back gate | SiO2 | 5 | p-type | 105 | 636(C) |
| Aligned CNTs [32] | Electrical breakdown | Back gate | HfO2 | 12 | p-type | 2 → 104 | 570(C) → 200(C) |
| Random network CNTs [149] | Channel cutting | Top gate | HfO2 | 100 | p-type | 10 → 104 | 200(C) → 80(C) |
| Random network CNTs [153] | 97% separated CNTs | Back gate | SiO2 | 20 | p-type | 104 | 20(p) |
| Random network CNTs [181] | Viologen doped CNTs | Back gate | HfO2 | 9 | p → n-type | 103 | 2(p) |
| Exfoliated graphene [141] | Monolayer graphene | Back gate | SiO2 | 4 | Ambipolar | 10 | 10,000(p) |
| CVD grown graphene [195] | Monolayer graphene | Back gate | SiO2 | 5 | Ambipolar | 10 | 1,100(p) |
| Exfoliated graphene [158] | Bilayer graphene | Dual gate | SiO2 (Back) HfO2 (Top) | 1.6 | Ambipolar | 5 → 100 | - |
| Graphene nanoribbon [162] | 16 →6 nm nanoribbon | Back gate | SiO2 | 0.25 | Ambipolar → p-type | 1.5 → 100 | - |
p: Parallel plate Model, c: Cylindrical Model, h: Hole Mobility, e: Electron Mobility.