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. 2017 Sep 11;7:11204. doi: 10.1038/s41598-017-11165-5

Figure 3.

Figure 3

Simulation results obtained from various operation schemes. (a) Heat map of the SET probability for different gap thickness t gap and gap voltage V. Plots of different I − V characteristics under (bd) VSM, (g) CSM and (h,i) GVR operation schemes. (c) and (d) I − V characteristics corresponding to different values of I cc and different stress times in the compliances state (i.e. at I = I cc), respectively. The insets of (c,d) are statistical results of conductance. (e) Fluctuations of current under VSM. The inset exhibits the simulation result of I − characteristics (black line) and its trendline (red line). (f) Simulated tested I − t curve in Cu/HfO2/M structure. In the simulation, a constant voltage stress of 1 mV is used, close to that used in the experiment. Inset of (h) The schematic of the circuit diagram in the GVR mode. (i) The plot of conductance jump corresponding to (h). Inset (i1) The evolution of the gap thickness when G < G 0 (the CF gap is not yet completely closed). Inset (i2) The magnified plot of conductance when G > G 0, and the conductance changes show discrete quantum effects.