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. 2017 Aug 7;17(9):5206–5212. doi: 10.1021/acs.nanolett.7b01092

Figure 4.

Figure 4

Coupled optical–electrical spectra response. (a) Simulated EQE of perovskite (dashed lines) and silicon (solid lines) cells for 2-T, 4-T, and 3-T (IBC) configuration at their optimum performances according to the Figure 3 (at perovskite thickness of 300, 950, and 550 nm for 2-T, 4-T, and 3-T (IBC), respectively with perovskite minority carrier diffusion length of 10 μm). (b) Optical path length enhancement showing significant enhancement in the 3-T (IBC) at long wavelength range that is beneficial for the bottom Si cell.