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. 2017 Sep 20;8:628. doi: 10.1038/s41467-017-00733-y

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Simulation of photon distribution probability and jitter performance. a FDTD simulation of 850 nm wavelength photon distribution in a control SPAD (left), nano-textured SPAD on Si substrate (middle), and light-trapping SPAD (right). Photons are incident in positive Z direction. The color bar on the right shows the color map of photon distribution probability density. b Normalized flux of 850 nm photons propagating varying horizontal distance in a control SPAD (blue cross), nano-textured SPAD on Si substrate (turquoise triangle) and light-trapping SPAD (magenta circle). c Monte Carlo simulation of jitter distribution at given photon absorption distribution for a control SPAD (blue) and light-trapping SPAD (red). d Simulated photon absorption at varying depths for a control SPAD (blue) and light-trapping SPAD (red), with top surface at 0 μm. Shaded areas correspond to regions being nano-structured. Dashed lines denote respective doping layer in an NIP junction from left (surface) to right (substrate)