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. 2017 Sep 25;8:682. doi: 10.1038/s41467-017-00582-9

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Cross sectional scanning electron microscopy of the optimized device structure which consists of glass/SnO₂:F/n-type buffer (ZnMgO or TiO₂)/Se/MoO_x/Au. Only 100-nm-thick Se absorber is used. b A schematic of combinatorial sputtering setup for accelerated studies on ZnMgO n-type buffer layers. A color map indicates the band gap (E _g) of ZnMgO thin films measured by optical absorption spectra. The measured film thickness values in the map indicate a gradient of deposition rate