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. 2017 Sep 25;8:682. doi: 10.1038/s41467-017-00582-9

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a As-measured current–voltage (J–V) characteristics of Se solar cell devices under dark (dashed lines) and illuminated (solid lines) condition, showing the effect of buffer and hole-transport layer. ZnMgO/Se/MoO_x/Au, TiO₂/Se/MoO_x/Au, and TiO₂/Se/Au devices are shown in red, black, and purple, respectively. b Illuminated J–V plots of ZnMgO/Se/MoO_x/Au devices with as-deposited Se, annealed at 200 ˚C, 5-day aged after annealing, and 5-month aged after annealing Se are shown in purple, black, orange and red. c Raman spectra of as-deposited Se (purple) and annealed Se at 200 °C (red). The annealed Se shows convoluted peaks at 235 and 237 cm⁻¹. d External quantum efficiency spectrum of a ZnMgO/Se/MoO_x/Au device