Table 1.
Top performing Se devices
| Device | Efficiency (%) | Fill factor (%) | V OC (V) | J SC (mA cm−2) | n 1 | J 01 (A cm−2) | R S (Ω cm2) | G sh (S cm−2) |
|---|---|---|---|---|---|---|---|---|
| ZnMgO/Se/MoOx/Au | 6.51 | 63.4 | 0.969 | 10.6 | 2.78 | 1.09 × 10−8 | 0.213 | 1.09 × 10−8 |
| (2.23) | (1.47 × 10−7) | (0.655) | (1.58 × 10−11) | |||||
| TiO2/Se/MoOx/Au | 5.73 | 60.6 | 0.866 | 10.9 | 3.14 | 1.94 × 10−8 | 0.828 | 2.19 × 10−8 |
| (1.93) | (1.54 × 10−8) | (1.18) | (1.06 × 10−5) | |||||
| TiO2/Se/Au | 3.88 | 50.5 | 0.728 | 10.5 | 4.00 | 7.48 × 10−6 | 6.255 | 2.63 × 10−3 |
| (1.95) | (1.59 × 10−10) | (1.15) | (8.83 × 10−6) | |||||
| SQ limit (E g = 1.95 eV) | 23.9 | 92.1 | 1.65 | 15.7 | 1 | 2.99 × 10−30 | 0 | 0 |
Statistics on device variation within a batch is shown in the SI. The single diode parameters in illuminated and dark conditions are also presented: ideality factor (n 1), dark reverse saturation current (J 01), series resistance (R S) and shunt conductance (G sh). The values with parentheses are extracted from dark current–voltage (J–V) measurement. Shockley–Queisser (SQ) limit calculated from refs. 36, 37