|
|
absorption coefficient |
| AC |
alternating current |
| c |
speed of light |
| CSD |
chemical solution deposition |
| d |
sample thickness |
| DFT |
density functional theory |
| DFT-LDA |
density functional theory in local density approximation |
| DFT-GGA |
density functional theory in generalised gradient approximation |
| DC |
direct current |
|
|
energetic position of the first interference maxima (for R) or minima (for T) |
|
|
band gap |
| FOM |
figure of merit |
|
|
FOM based on transmittance and reflectance measurements |
|
|
simplified FOM based on transmittance measurements |
|
|
FOM based on transmittance measurement and reflectance estimation |
| GW |
DFT correction based on an expansion of the single-particle |
| Green’s function G with respect to the Coulomb interaction W
|
| h |
Plank constant |
| ITO |
indium tin oxide |
| k |
extinction coefficient |
| LED |
light emitting device |
|
|
carrier mobility |
| MBE |
molecular beam epitaxy |
|
|
frequency |
| n |
refractive index |
|
|
carrier concentration |
| OLED |
organic light emitting diode |
| PLD |
pulsed laser deposition |
|
|
resistivity |
|
|
density |
| r |
Tauc exponent |
| R |
reflectance |
|
|
bulk material, normal incidence reflectance |
|
|
measured, average normal incidence reflectance (1.5–3.0 eV) |
| RF |
radio frequency |
|
|
sheet resistance |
|
|
conductivity |
| SP |
spray pyrolysis |
|
|
measured, average normal incidence transmission (1.5–3.0 eV) |
| TCO |
transparent conducting oxide |
| TFT |
thin film transistor |
| TTFT |
transparent thin film transistor |
| UV-VIS |
ultraviolet-visible |
| XRD |
X-ray diffraction |
| XRR |
X-ray reflection |