Table 2.

Electrical characterization of the P3HT-based OTFTs with a 0.023 wt % blended Y₂O₃/chitosan dielectric gate on the polyimide substrate for bending tests.

Condition	Vth (V)	Ion (A)	Ioff (A)	Ioff/Ion Ratio	Mobility (cm2/Vs)
Flat	−2.0	$1.268\times {10}^{-5}$	$7.421\times {10}^{-10}$	${10}^5$	$2.50\times {10}^{-2}$
Concave bending 3.50 (cm)	−2.5	$4.592\times {10}^{-6}$	$5.740\times {10}^{-11}$	${10}^5$	$3.33\times {10}^{-2}$
Concave bending 2.85 (cm)	−2.7	$1.298\times {10}^{-5}$	$1.913\times {10}^{-9}$	${10}^4$	$2.70\times {10}^{-2}$
Flat	−2.1	$1.294\times {10}^{-5}$	$4.571\times {10}^{-10}$	${10}^5$	$1.87\times {10}^{-4}$
Convex bending 3.50 (cm)	−3.0	$9.899\times {10}^{-6}$	$1.722\times {10}^{-9}$	${10}^3$	$8.53\times {10}^{-2}$
Convex bending 2.85 (cm)	−3.3	$9.480\times {10}^{-6}$	$3.296\times {10}^{-10}$	${10}^3$	$4.80\times {10}^{-2}$
Flat	−1.5	$1.059\times {10}^{-5}$	$2.539\times {10}^{-9}$	${10}^4$	$3.33\times {10}^{-2}$