Table 3.

Material properties of various semiconductors for high temperature applications (adapted and updated from [26,60,81]).

Properties	Si	3C-SiC	4H-SiC	6H-SiC	GaAs	GaN	AlN
Band gap (eV)	1.12	2.36	3.23	3.05	1.4	3.4	6.2
Thermal Expansion coefficient $({10}^{-6}{\mathrm{K}}^{-1})$	2.6	2.9	-	4.2	5.7	5.6	4.5
Lattice constant (nm)	0.543	0.435	0.307	0.308	$0.3189a_0$	$0.5185c_0$	$0.311a_0$
Thermal conductivity ${(\mathrm{Wcm}}^{-1}{\mathrm{K}}^{-1})$	1.5	3.3-4.9	3.7	4.9	0.46	1.3	3
Density $({\mathrm{gcm}}^{-3})$	2.33	3.21	3.21	3.21	5.32	6.15	3.25
Electronic maximum operating temperature (°C)	150	600	750	700	350	>700	>700
Relative dielectric constant	11.8	9.72	9.7	9.66	12.5	11	10
Young Modulus (GPa)	130–185	310–550	390–690	390–690	85.5	271	302–348
Physical stability	Good	Excellent	-	-	Fair	Good	Good
Hole mobility $({\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}@N_A={10}^{16} {\mathrm{cm}}^{-3})$	480	40	115	90	400	250	14
Electron mobility $({\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}@N_D={10}^{16} {\mathrm{cm}}^{-3})$	1430	800	$(\perp \mathrm{c-axis}:400)$	$(\perp \mathrm{c-axis}:400)$	8500	1250	-
Breakdown field ${(10}^5{\mathrm{Vcm}}^{-1}@N_A={10}^{17} {\mathrm{cm}}^{-3})$	3	>15	$(\parallel \mathrm{c-axis}:3.0)$	$(\parallel \mathrm{c-axis}:3.2)$ $(\perp \mathrm{c-axis}>1)$	6	>50	>50
Saturation electron velocity ${(10}^7{\mathrm{cms}}^{-1})$	1	2.5	2	2	1	2.2	1.4