Figure 2.

Model of the transducer including parasitic capacitance, where C₀+ΔC and C₀-ΔC are the differential area-changed capacitances, C_p1 and C_p2 are the parasitic capacitances of the electrodes on the top die, C_p3 is the parasitic capacitance between the electrodes on the proof mass and silicon substrate, and R₁, R₂ and R₃ are the resistances of the deposited wires for signal transmission, C_f and R₄ are the electron devices of the amplifier circuit. The silicon substrate connects to the ground through ohmic contact to overcome influences of C_p1 and C_p2 on the sensitivity and offset.