Thickness of SiO2
|
0.2 |
μm |
Thickness of electrodes |
0.4 |
μm |
Thickness of the PSPI |
3 |
μm |
Solder bonding thickness pre-optimization |
90 |
μm |
Solder bonding thickness post-optimization |
20 |
μm |
Dimension of a single electrode |
0.1 × 0.3 |
mm |
Width of spring |
42 |
μm |
Length of spring |
9 |
mm |
Number of springs on both side of proof mass |
12 |
pair |
Number of arrayed capacitors (n) |
45 |
- |
Length of the electrode (l) |
3 |
mm |
Width of a single electrode (a) |
0.1 |
mm |
Capacitors spacing pre-optimization (d) |
90 |
μm |
Capacitor spacing post-optimization (d’) |
30 |
μm |
Thickness of the silicon substrate |
500 |
μm |
Mass of the proof mass (m) |
0.4 |
g |
Frequency of the spring-mass structure (f) |
15 |
Hz |